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MEMORIES
Founded in September 1987 and listed on the Taiwan Stock Exchange in 1995 (STE : 2344), Winbond is headquartered in Central Taiwan Science Park, Taichung, Taiwan. Winbond's 12-inch fab, a factory with a high level of intelligent technology and automation, is located in Taichung Science Park. Winbond is a specialty memory IC company. From product design, R&D and wafer fabrication to branded product marketing, Winbond strives to provide total memory solutions to its global customers. Winbond's major product lines include Code Storage Flash Memory, TrustME® Secure Flash, Specialty DRAM and Mobile DRAM. The company is the only one in Taiwan with the capability to develop DRAM and FLASH products in-house.
Winbond
Winbond Product Portfolio Overview
Mobile DRAM | Code Storage Flash | Specialty DRAM | TrustME® |
|---|---|---|---|
Winbond Electronics - Mobile DRAM
HYPERRAM
Winbond HYPERRAM™ products provide a compact alternative to traditional pseudo-SRAM in IoT and consumer devices, automotive and industrial equipment. HYPERRAM™ enables even greater capacity, higher speed, and smaller form factor. It also offers the advantage of simplified operational usage.
Density | Speed | Data Width | Package | Operating Temp | Automotive | Voltages |
|---|---|---|---|---|---|---|
32Mb | 200MHz | x8 | 24 TFBGA | -40~85C | Yes | 1.8V |
32Mb | 200MHz | x8 | 24 TFBGA | -40~85C | Yes | 3V |
64Mb | 200MHz | x8 | WLCSP | -40~85C | - | 1.8V |
64Mb | 200MHz | x8 | 24 TFBGA | -40~85C | Yes | 1.8V |
64Mb | 200MHz | x8 | 24 TFBGA | -40~85C | Yes | 3V |
128Mb | 200MHz | x8 | 24 TFBGA | -40~85C | Yes | 1.8V |
128Mb | 200MHz | x8 | 24 TFBGA | -40~85C | Yes | 3V |
128Mb | 200MHz | x16 | 49 WFBGA | -40~85C | - | 1.35V-1.8V |
128Mb | 200MHz | x16 | WLCSP | -40~85C | - | 1.35V-1.8V |
256Mb | 200MHz / 250MHz | x8 | 24 TFBGA | -40~85C | Yes | 1.8V |
256Mb | 200MHz | x8 | WLCSP | -40~85C | - | 1.8V |
256Mb | 200MHz | x16 | WLCSP | -40~85C | - | 1.8V |
256Mb | 200MHz / 250MHz | x16 | 49 WFBGA | -40~85C | - | 1.8V |
512Mb | 200MHz / 250MHz | x8 | 24 TFBGA | -40~85C | Yes | 1.8V |
512Mb | 200MHz / 250MHz | x8 | 49 WFBGA | -40~85C | - | 1.8V |
Low Power DRAM
Winbond mobile DRAM devices support both x16 and x32 data widths. Major features for the families of products shown in the table below include the following : Sequential or Interleave burst, High Clock rat, Standard Self Refresh, Partial-Array Self Refresh (PASR), Automatic Temperature Compensated Self Refresh Rate (ATCSR), Deep Power-Down (DPD), and Programmable output buffer driver strength.
Mode | Density | Description | Package | Automotive |
|---|---|---|---|---|
PSRAM | 64Mb | X16, ADM 1.8V,
133/166Mbps(SDR),
200/266/333Mbps(DDR) | BGA49 | - |
LPSDR/DDR | 256Mb | X16 1.8V,
333/400Mbps(DDR) | BGA60 | - |
LPSDR/DDR | 512Mb | X16, x32 1.8V,
133/166Mbps(SDR),
333/400Mbps(DDR) | BGA54, BGA60, BGA90 | Yes |
LPSDR/DDR | 1Gb | X16, x32 1.8V,
333/400Mbps(DDR) | BGA60, BGA90 | Yes |
LPDDR2 | 512Mb | X16, x32 1.8/1.2V,
667/800/1066Mbps | BGA134 | Yes |
LPDDR2 | 1Gb | X16, x32 1.8/1.2V,
667/800/1066Mbps | BGA134 | Yes |
LPDDR2 | 2Gb | X16, x32 1.8/1.2V,
667/800/1066Mbps | BGA134 | Yes |
LPDDR3 | 512Mb (1) | X16, 1.8/1.2V,
1600/1866/2133Mbps | BGA178 | - |
LPDDR3 | 1Gb | X16, x32 1.8/1.2V,
1600/1866/2133Mbps | BGA178 | - |
LPDDR4/4x | 1Gb | SDP, x16,
1.8/1.1/1.1V (LPDDR4),
1.8/1.1V/0.6V (LPDDR4X),
3200/3733/4266Mbps | BGA100, GBA200 | Yes |
LPDDR4/4x | 2Gb | SDP, x16,
1.8/1.1/1.1V (LPDDR4),
1.8/1.1V/0.6V (LPDDR4X),
3200/3733/4266Mbps | BGA100, GBA200 | Yes |
LPDDR4/4x | 2Gb | DDP, x32,
1.8/1.1/1.1V (LPDDR4),
1.8/1.1V/0.6V (LPDDR4X),
3200/3733/4266Mbps | BGA200 | Yes |
LPDDR4/4x | 4Gb (2) | SDP, x16,
1.8/1.1/1.1V (LPDDR4),
1.8/1.1V/0.6V (LPDDR4X),
3200/3733/4266Mbps | BGA100, GBA200 | - |
LPDDR4/4x | 4Gb | DDP, x32,
1.8/1.1/1.1V (LPDDR4),
1.8/1.1V/0.6V (LPDDR4X),
3200/3733/4266Mbps | BGA200 | Yes |
LPDDR4/4x | 8Gb (2) | DDP, x32,
1.8/1.1/1.1V (LPDDR4),
1.8/1.1V/0.6V (LPDDR4X),
3200/3733/4266Mbps | BGA200 | - |
Note 1 : 512Mb LPDDR3 sample ready on 2024
Note 2 : SPD 4Gb LPDDR4/4X sample ready on 2024; DDP 8Gb LPDDR4/4X sample ready on 2024
Winbond Electronics - Specialty DRAM
Specialty DRAM
Winbond’s Specialty DRAM, focusing on low and middle density, features characteristics of high performance and high speed and is widely used by leaders in the consumer, communication, computer peripheral, industrial, and automobile markets. Completed solution can be provided to variety customers.
SDR, DDR, DDR2, and DDR3 support for Industrial and automotive application with AEC-Q100, TS16949, ISO9001/14001, OHSAS18001 certificates.
Mode | Density | Description | Package | Automotive |
|---|---|---|---|---|
DDR3/3L | 1Gb | X8, x16 1.5V or 1.35V
1866/2133Mbps | BGA78
BGA96 | Yes |
DDR3/3L | 2Gb | X8, x16 1.5V or/and 1.35V
1866/2133Mbps | BGA78
BGA96 | Yes |
DDR3/3L | 4Gb | X8, x16 1.5V or/and 1.35V
1866/2133Mbps | BGA78
BGA96 | Yes |
DDR3/3L | 8Gb | X16 DDP 1.5V and 1.35V
1866/2133Mbps | BGA96 | - |
DDR4 (1) | 4Gb | X8, x16 1.2V
2666/3200Mbps | BGA78
BGA96 | - |
DDR4 (1) | 8Gb | X8, x16 1.2V
2666/3200Mbps | BGA78
BGA96 | - |
DDR4 (1) | 64Mb | X16 2.5V/3.3V
166/200Mbps | TSOP54
BGA54 | Yes |
SDRAM | 128Mb | X16 2.5V/3.3V
166/200Mbps | TSOP54
BGA54 | Yes |
SDRAM | 128Mb | X32(DDP) 2.5V/3.3V
166/200Mbps | BGA90 | Yes |
SDRAM | 256Mb | X16 2.5V/3.3V
166/200Mbps | TSOP54
BGA54 | Yes |
SDRAM | 256Mb | X32(DDP) 2.5V/3.3V
166/200Mbps | BGA90 | Yes |
DDR | 64Mb | X16 2.5V
333/400Mbps | TSOP66 | Yes |
DDR | 128Mb | X16 2.5V
333/400Mbps | TSOP66 | Yes |
DDR | 256Mb | X16 2.5V
333/400Mbps | TSOP66 | Yes |
DDR2 | 128Mb | X16 1.8V
667/800/1066Mbps | BGA84 | Yes |
DDR2 | 256Mb | X8, X16 1.8V
667/800/1066Mbps | BGA60
BGA84 | Yes |
DDR2 | 512Mb | X8, X16 1.8V
667/800/1066Mbps | BGA60
BGA84 | Yes |
DDR2 | 1Gb | X8, X16 1.8V
667/800/1066Mbps | BGA60
BGA84 | Yes |
DDR2 | 2Gb | X8, X16 1.8V
667/800/1066Mbps | BGA60
BGA84 | Yes |
Note 1 : 4Gb DDR4 sample ready on 2024; 8Gb DDR4 sample ready on 2025
Winbond Electronics - Security Flash
TrustME®
Winbond TrustME® Secure Flash products strengthen the robustness by securing code and data storage for trusted boot and firmware updates using external secure flash. In an increasingly security conscious world, robust solutions for trusted boot and firmware updates are indispensable to IoT security foundation. Winbond’s Common Criteria certified production site guarantees secured production, software programming, and key provisioning for connected systems.
Product | Density | Security Level |
|---|---|---|
W77Q | 16Mb, 32Mb, 64Mb, 128Mb | - CC EAL 2+
- SESIP Level 2 (with IEC 62443 and NIST 8259A ready)
- ISO 26262 ASIL-C ready
- ISO 21434
- FIPS 140-3 ACVTS
- FIPS 140-3 CMVP |
W75F | 4MB, 16Mb, 32Mb | - CC EAL 5+, PP0117 complaint
- PSA Certified Level 2 ready
- SESIP Level 3 + Physical Attacker
- ISO 26262 ASIL-D |
W76S | 16Mb, 32Mb | - CC EAL 5+
- EMVCo
- CFNR |
Winbond Electronics - Code Storage Flash
Serial NOR Flash 3V
Voltage | Density | Description | Automotive |
|---|---|---|---|
3V | 2Mb | Dual SPI, 104MHz | Yes |
3V | 2Mb | Quad SPI, 104MHz | Yes |
3V | 4Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
3V | 4Mb | Dual SPI, 104MHz | Yes |
3V | 4Mb | Quad SPI, 104MHz | Yes |
3V | 8Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
3V | 8Mb | Quad SPI, 104MHz | Yes |
3V | 16Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
3V | 32Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
3V | 64Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
3V | 128Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
3V | 256Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
3V | 512Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
3V | 1Gb | Quad SPI, QPI, 133MHz, DTR | Yes |
3V | 2Gb | Quad SPI, QPI, 133MHz, DTR | Yes |
Serial NOR Flash 1.8V
Voltage | Density | Description | Automotive |
|---|---|---|---|
1.8V | 4Mb | Quad SPI, 104MHz | Yes |
1.8V | 2Mb | Quad SPI, 104MHz | Yes |
1.8V | 8Mb | Quad SPI, 104MHz | Yes |
1.8V | 16Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
1.8V | 32Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
1.8V | 64Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
1.8V | 128Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
1.8V | 256Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
1.8V | 512Mb | Quad SPI, QPI, 133MHz, DTR | Yes |
1.8V | 1Gb | Quad SPI, QPI, 133MHz, DTR | Yes |
1.8V | 2Gb | Quad SPI, QPI, 133MHz, DTR | Yes |
Serial NOR Flash 1.2V
Voltage | Density | Description | Automotive |
|---|---|---|---|
1.2V | 8Mb | Quad SPI, QPI, 80MHz | - |
1.2V | 16Mb | Quad SPI, QPI, 80MHz | - |
1.2V | 32Mb | Quad SPI, QPI, 80MHz | - |
1.2V | 64Mb | Quad SPI, QPI, 80MHz | - |
1.2V | 128Mb | Quad SPI, QPI, 80MHz | - |
1.2V | 256Mb | Quad SPI, QPI, 80MHz | - |
1.2V | 512Mb | Quad SPI, QPI, 80MHz | - |
RPMC SpiFlash®
Density | Description | Automotive |
|---|---|---|
64Mb | 1.8V, Quad SPI, QPI, RPMC, 104MHz | - |
64Mb | 3V, Quad SPI, QPI, RPMC, 104MHz | - |
128Mb | 1.8V, Quad SPI, QPI, RPMC, 104MHz | - |
128Mb | 3V, Quad SPI, QPI, RPMC, 104MHz | - |
256Mb | 1.8V, Quad SPI, QPI, RPMC, 104MHz | - |
256Mb | 3V, Quad SPI, QPI, RPMC, 104MHz | - |
512Mb | 1.8V, Quad SPI, QPI, RPMC, 104MHz | - |
512Mb | 3V, Quad SPI, QPI, RPMC, 104MHz | - |
Octal Flash Family
Flash | Density | Description | Automotive |
|---|---|---|---|
NAND | 1Gb | 1.8V, Octal SPI, DTR, 120MHz | Yes |
NAND | 2Gb | 1.8V, Octal SPI, DTR, 120MHz | Yes |
NAND | 4Gb | 1.8V, Octal SPI, DTR, 120MHz | Yes |
NOR | 512Mb | 1.8V, Octal SPI, DTR, 200MHz | Yes |
NOR | 1Gb | 1.8V, Octal SPI, DTR, 200MHz | Yes |
NOR | 2Gb | 1.8V, Octal SPI, DTR, 200MHz | Yes |
SpiStack Flash® Family
NOR | NAND | Description | Automotive |
|---|---|---|---|
16Mb | 1Gb | 1.8V 104MHz, Continuous Read | - |
16Mb | 1Gb | 3V 104MHz, Continuous Read | - |
32Mb | 1Gb | 1.8V 104MHz, Continuous Read | - |
32Mb | 1Gb | 3V 104MHz, Continuous Read | - |
64Mb | 1Gb | 1.8V 104MHz, Continuous Read | - |
64Mb | 1Gb | 3V 104MHz, Continuous Read | - |
128Mb | 1Gb | 1.8V 104MHz, Continuous Read | - |
128Mb | 1Gb | 3V 104MHz, Continuous Read | - |
512Mb (256Mbx2) | 1.8V, Quad SPI, QPI, DTR, 104MHz | - | |
512Mb (256Mbx2) | 3V, Quad SPI, QPI, DTR, 104MHz | - |
QspiNAND Flash
Density | Description | Automotive |
|---|---|---|
512Mb | 1.8V, QspiNAND | Yes |
512Mb | 3V, QspiNAND | Yes |
1Gb | 1.8V, QspiNAND | Yes |
1Gb | 1.8V, QspiNAND, DTR | Yes |
1Gb | 3V, QspiNAND | Yes |
2Gb | 1.8V, QspiNAND | Yes |
2Gb | 1.8V, QspiNAND, DTR | Yes |
2Gb | 3V, QspiNAND | Yes |
4Gb | 1.8V, QspiNAND | - |
4Gb | 3V, QspiNAND | - |
SLC NAND Flash Memory
Density | Description | Automotive |
|---|---|---|
1Gb | 1.8V, x8, ONFi | Yes |
1Gb | 3V, x8, ONFi | Yes |
2Gb | 1.8V, x8, ONFi | Yes |
2Gb | 3V, x8, ONFi | Yes |
4Gb | 1.8V, x8, ONFi | Yes |
4Gb | 3V, x8, ONFi | Yes |
8Gb | 1.8V, x8, ONFi | - |
8Gb | 3V, x8, ONFi | Yes |
SLC NAND+LPDDR2 MCP
Package Ball Out | SLC NAND: Density | SLC NAND: I/O | LPDDR2: Density | LPDDR2: I/O |
|---|---|---|---|---|
162 (8x10.5x1.0) | 1Gb | 8 | 512Mb | 32 |
162 (8x10.5x1.0) | 1Gb | 8 | 1Gb | 32 |
162 (8x10.5x1.0) | 2Gb | 8 | 1Gb | 32 |
162 (8x10.5x1.0) | 2Gb | 8 | 2Gb | 32 |
162 (8x10.5x1.0) | 4Gb | 8 | 2Gb | 32 |
